Antiferromagnetic materials could represent the future of spintronic applications thanks to
the numerous interesting features they combine: they are robust against perturbation due to …

Antiferromagnetic materials are internally magnetic, but the direction of their ordered
microscopic moments alternates between individual atomic sites. The resulting zero net …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Detecting the orientation of the Néel vector is a major research topic in antiferromagnetic
spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the …

Using antiferromagnets as active elements in spintronics requires the ability to manipulate
and read-out the Néel vector orientation. Here we demonstrate for Mn2Au, a good conductor …

Antiferromagnets are hard to control by external magnetic fields because of the alternating
directions of magnetic moments on individual atoms and the resulting zero net …

Spintronics is one of the most promising next generation information technology, which uses
the spins of electrons as information carriers and possesses potential advantages of …

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an
intrinsic gigahertz threshold. Recently, realization of memory devices based on …

Since it was first demonstrated in 1987, magnetic force microscopy (MFM) has become a
truly widespread and commonly used characterization technique that has been applied to a …

We present a computational study of antiferromagnetic transition in RuO 2. The rutile
structure with the magnetic sublattices coupled with π/2 rotation leads to a spin-polarized …