Nanometre-scale electronics with III–V compound semiconductors
JA Del Alamo - Nature, 2011 - nature.com
For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
A comprehensive analysis of nanoscale transistor based biosensor: a review
P Kaur, AS Buttar, B Raj - 2021 - nopr.niscpr.res.in
Imperative introduction of biosensor in the field of medicine, defence, food safety, security
and environmental contamination detection acquired paramount attraction. Thus the …
and environmental contamination detection acquired paramount attraction. Thus the …
Passivation of III–V surfaces with crystalline oxidation
P Laukkanen, MPJ Punkkinen, M Kuzmin… - Applied Physics …, 2021 - pubs.aip.org
Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …
minimize the impact of point defects on device performance has been a dominant theme in …
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs),
an observation that is commonly attributed to the presence of surface states and their …
an observation that is commonly attributed to the presence of surface states and their …
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
We report on the electrical characteristics of HfO 2 and HfO 2/Al 2 O 3 gate dielectrics
deposited on n-In 0.53 Ga 0.47 As by atomic layer deposition, after in-situ hydrogen or …
deposited on n-In 0.53 Ga 0.47 As by atomic layer deposition, after in-situ hydrogen or …
Damage-free smooth-sidewall InGaAs nanopillar array by metal-assisted chemical etching
Producing densely packed high aspect ratio In0. 53Ga0. 47As nanostructures without
surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices …
surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices …
Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As
The high-k gate dielectric structures in stacked (HfO2/Al2O3) and nanolaminated (HfAlO x)
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties
J Treu, T Stettner, M Watzinger, S Morkötter… - Nano …, 2015 - ACS Publications
Core–shell nanowires (NW) have become very prominent systems for band engineered NW
heterostructures that effectively suppress detrimental surface states and improve …
heterostructures that effectively suppress detrimental surface states and improve …
Effects of (NH4) 2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors
Planar and 3-dimensional (3D) buried-channel InGaAs metal-oxide-semiconductor field-
effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron …
effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron …