A class of septuple-atomic-layer two-dimensional (2D) materials, Mo Si 2 N 4 and W Si 2 N
4, was fabricated recently, and the three constituent atoms may be replaced by other …

For many decades, SRAM cell design with low power dissipation is the problem of interest
for researchers due to its numerous applications in embedded systems. In this research …

We proposed 2D piezoelectric FET (PeFET)–based compute-enabled non-volatile memory
for ternary deep neural networks (DNNs). PeFETs hinge on ferroelectricity for bit storage and …

We propose nonvolatile memory (NVM) designs based on piezoelectric strain FET (PeFET)
utilizing piezoelectric/ferroelectric material (PE/FE such as PZT) coupled with 2-D transition …

The electrostrictive 2-D field-effect transistor (EFET) is a steep-slope device that promises to
offer aggressive length and voltage scalability. Two key features of this device are its high …

The needs of the semiconductor industry in this era are heavily data-driven. While the
processing demands have grown many folds due to the proliferation of data, the slow-down …