Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
One-Step fabrication of GeSn branched nanowires
We report for the first time the self-catalyzed, single-step growth of branched GeSn
nanostructures by a vapor–liquid–solid mechanism. These typical GeSn nanostructures …
nanostructures by a vapor–liquid–solid mechanism. These typical GeSn nanostructures …
Ge0. 83Sn0. 17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur
passivation on gate stack quality | Journal of Applied Physics | AIP Publishing Skip to Main …
passivation on gate stack quality | Journal of Applied Physics | AIP Publishing Skip to Main …
Influence of growth kinetics on Sn incorporation in direct band gap Ge 1− x Sn x nanowires
Ge1− xSnx alloys with substantial incorporation of Sn show promise as direct bandgap
group IV semiconductors. This article reports the influence of growth kinetics on Sn inclusion …
group IV semiconductors. This article reports the influence of growth kinetics on Sn inclusion …
The band structure and optical gain of a new IV-group alloy GePb: a first-principles calculation
W Huang, B Cheng, C Xue, H Yang - Journal of Alloys and Compounds, 2017 - Elsevier
A new Si-based material GePb which has been predicted to possess a direct-bandgap
attracts much attention in the field of fabricating Si-based light source recently. To precisely …
attracts much attention in the field of fabricating Si-based light source recently. To precisely …
[HTML][HTML] Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy
The dielectric spectral response of Ge 1-x Sn x thin film alloys with relatively high Sn
contents (0.15≤ x≤ 0.27) and thickness from 42 to 132 nm was characterized by variable …
contents (0.15≤ x≤ 0.27) and thickness from 42 to 132 nm was characterized by variable …
[HTML][HTML] Band structure critical point energy in germanium–tin alloys with high tin contents
The dielectric functions of germanium–tin alloy thin-films, deposited by molecular beam
epitaxy on bulk Ge substrates, with relatively high Sn contents from 15 to 27 at.%, were …
epitaxy on bulk Ge substrates, with relatively high Sn contents from 15 to 27 at.%, were …
Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films
We report the results of a study that was conducted to investigate the recombination paths of
photoexcited charge carriers in GeSn thin films. The charge carrier lifetime was predicted as …
photoexcited charge carriers in GeSn thin films. The charge carrier lifetime was predicted as …
[HTML][HTML] Band gap and strain engineering of pseudomorphic Ge1− x− ySixSny alloys on Ge and GaAs for photonic applications
The authors report the compositional dependence of the direct and indirect band gaps of
pseudomorphic Ge 1− x− y Si x Sn y alloys on Ge and GaAs with (001) surface orientation …
pseudomorphic Ge 1− x− y Si x Sn y alloys on Ge and GaAs with (001) surface orientation …
Design of Ge1-xSnx-on-Si waveguide photodetectors featuring high-speed high-sensitivity photodetection in the C- to U-bands
XY Li, JY Wang, YF Liu, JJ Chen, Y Du, W Wang… - Applied Optics, 2020 - opg.optica.org
We present the design of Ge_1− xSn_x-on-Si waveguide photodetectors for the applications
in the C-to U-bands. The GeSn photodetectors have been studied in respect to responsivity …
in the C-to U-bands. The GeSn photodetectors have been studied in respect to responsivity …