In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

Flexible optoelectronics have attracted much attention in recent years for their potential
applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

The seamless integration of III-V nanostructures on silicon is a long-standing goal and an
important step towards integrated optical links. In the present work, we demonstrate scaled …

Highly integrated optoelectronic and photonic systems underpin the development of next-
generation advanced optical and quantum communication technologies, which require …

III–V semiconductor nanowires offer potential new device applications because of the
unique properties associated with their 1D geometry and the ability to create quantum wells …

III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact
light sources and photodetectors from visible to infrared spectral region. However, most of …

Semiconductor nanowires are considered as one of the most promising candidates for next-
generation devices due to their unique quasi-one-dimensional structures and novel physical …

The Von Neumann architecture has been the foundation of modern computing systems. Still,
its limitations in processing large amounts of data and parallel processing have become …

Chemiresistive sensing is one of the most promising technologies for portable and
miniaturized chemical sensing, with applications ranging from air quality monitoring to …