Spatially Resolved Light‐Induced Ferroelectric Polarization in α‐In2Se3/Te Heterojunctions
K Zhang, H Li, H Mu, Y Li, P Wang, Y Wang… - Advanced …, 2024 - Wiley Online Library
Light‐induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in
photodetectors with multilevel current and reconfigurable capabilities. However, translating …
photodetectors with multilevel current and reconfigurable capabilities. However, translating …
Pushing the thickness limit of the giant Rashba effect in ferroelectric semiconductor GeTe
B Croes, A Llopez, C Tagne-Kaegom… - Nano Letters, 2024 - ACS Publications
Ferroelectric Rashba semiconductors (FERSCs) such as α-GeTe are promising candidates
for energy-efficient information technologies exploiting spin–orbit coupling (SOC) and are …
for energy-efficient information technologies exploiting spin–orbit coupling (SOC) and are …
Raman Spectra of PbTe‐and GeTe‐Based Monocrystalline Epitaxial Layers
Lead telluride and germanium telluride are well‐known IV‐VI semiconductors, which is now
the focus of research due to the perspective of application as thermoelectrics for midrange …
the focus of research due to the perspective of application as thermoelectrics for midrange …
Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave
infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth …
infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth …