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Pressure-Driven Polar Orthorhombic to Tetragonal Phase Transition in Hafnia at Room Temperature
Oxides are legendary for their complex energy landscapes, sensitivity to external stimuli,
and property control through chemical substitution. Of these, the binary oxide HfO2 is one of …
and property control through chemical substitution. Of these, the binary oxide HfO2 is one of …
Cross-Point Ferroelectric Hf0.5Zr0.5O2 Capacitors for Remanent Polarization-Driven In-Memory Computing
Ferroelectric Hf0. 5Zr0. 5O2 (HZO) capacitors have been extensively explored for in-memory
computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) …
computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) …
Impact of Tetrakis (ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfxZr1-xO2 thin films
As the semiconductor industry advances toward high-density, energy-efficient non-volatile
memory, ferroelectric Hf x Zr 1-x O 2 (HZO) has emerged as a promising material due to its …
memory, ferroelectric Hf x Zr 1-x O 2 (HZO) has emerged as a promising material due to its …
Small Signal Capacitance in Ferroelectric Hafnium Zirconium Oxide: Mechanisms and Physical Insights
This study presents a theoretical investigation of the physical mechanisms governing small
signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide (Hf0. 5Zr0. 5O2 …
signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide (Hf0. 5Zr0. 5O2 …
Physical reservoir computing-based online learning of HfSiOx ferroelectric tunnel junction devices for image identification
S Lee, G An, G Kim, S Kim - Applied Surface Science, 2025 - Elsevier
Synaptic devices for neuromorphic computing, remarkably those destined for next-
generation applications, are increasingly considering ferroelectric tunnel junctions (FTJs) as …
generation applications, are increasingly considering ferroelectric tunnel junctions (FTJs) as …
Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-destructive Read
The unique concept of a non-volatile capacitive memory window (CMW) in ferroelectric (FE)
capacitors (FeCAP) allows for a non-destructive read operation (NDRO). NDRO decouples …
capacitors (FeCAP) allows for a non-destructive read operation (NDRO). NDRO decouples …