Advances in the atomic force microscopy for critical dimension metrology
Downscaling, miniaturization and 3D staking of the micro/nano devices are burgeoning
phenomena in the semiconductor industry which have posed sophisticated challenges in …
phenomena in the semiconductor industry which have posed sophisticated challenges in …
Impact of process variation on nanosheet gate-all-around complementary FET (CFET)
X Yang, X Li, Z Liu, Y Sun, Y Liu, X Li… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, dc characteristic variations of nanosheet (NS) gate-all-around (GAA)
complementary FET (CFET) induced by process fluctuations are investigated for the first …
complementary FET (CFET) induced by process fluctuations are investigated for the first …
Investigations on line-edge roughness (LER) and line-width roughness (LWR) in nanoscale CMOS technology: Part II–experimental results and impacts on device …
In the part I of this paper, the correlation between line-edge roughness (LER) and line-width
roughness (LWR) is investigated by theoretical modeling and simulation. In this paper …
roughness (LWR) is investigated by theoretical modeling and simulation. In this paper …
Impact of fin line edge roughness and metal gate granularity on variability of 10-nm node SOI n-FinFET
We report the numerical simulation study on the characteristic variability of 10-nm SOI Multi
Fin n-FET due to the impact of random fluctuation sources such as gate work function …
Fin n-FET due to the impact of random fluctuation sources such as gate work function …
3-D LER and RDF matching performance of nanowire FETs in inversion, accumulation, and junctionless modes
Nanowire field-effect transistors (NWFETs) have emerged as promising candidates for
realization of advanced CMOS technology nodes. Due to small nanowire dimensions …
realization of advanced CMOS technology nodes. Due to small nanowire dimensions …
Impact of process fluctuations on reconfigurable silicon nanowire transistor
In this article, the impact of intrinsic process fluctuations on reconfigurable field-effect
transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources …
transistor (RFET) is investigated for the first time. Three kinds of process fluctuation sources …
Impact of interface trap charge and temperature on the performance of epitaxial layer tunnel field effect transistor
A simulation study of the impact of interface traps on the performance of the Epitaxial Layer
Tunnel Field Effect Transistor (ETLTFET) having Si (1-x) Ge x as source material is …
Tunnel Field Effect Transistor (ETLTFET) having Si (1-x) Ge x as source material is …
Line-edge roughness from extreme ultraviolet lithography to fin-field-effect-transistor: computational study
SK Kim - Micromachines, 2021 - mdpi.com
Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch
resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line …
resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line …
A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology
A simple device-level characterization approach to quantitatively evaluate the impacts of
different random variation sources in FinFETs is proposed. The impacts of random dopant …
different random variation sources in FinFETs is proposed. The impacts of random dopant …
Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their …
This article proposes grain-pattern-dependent threshold-voltage () models to predict the
variability of () due to work-function (WK) fluctuation (WKF) for the vertically stacked …
variability of () due to work-function (WK) fluctuation (WKF) for the vertically stacked …