A novel nondestructive testing method for amorphous Si–Sn–O films

Turnitin 降AI改写 早检测系统 早降重系统 Turnitin-UK版 万方检测-期刊版 维普编辑部版 Grammarly检测 Paperpass检测 checkpass检测 PaperYY检测

A review on the recent advancements in tin oxide-based thin-film transistors for large-area electronics

K Jenifer, S Arulkumar, S Parthiban… - Journal of Electronic …, 2020 - Springer
Amorphous oxide semiconductors have gained significant attention in the past few decades
and have emerged as a promising material for thin-film transistors (TFTs) because they offer …
Spara Citera Citerat av 45 Relaterade artiklar Alla 6 versionerna

Comprehensive study of improved negative-bias-illumination-temperature stress stability in terbium-doped indium-zinc-oxide thin-film transistors

J Liu, H Xu, M Li, M Xu, J Peng - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
In this study, the explanation of the enhanced negative-bias-illumination-temperature stress
stability (NBITS) of indium-zinc-oxide thin-film transistors (IZO TFTs) under terbium (Tb) …
Spara Citera Citerat av 10 Relaterade artiklar Alla 2 versionerna

Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium do**

H Xu, M Xu, M Li, Z Chen, J Zou, W Wu… - … Applied Materials & …, 2019 - ACS Publications
Praseodymium-doped indium zinc oxide (PrIZO) has been employed as the channel layer of
thin-film transistors (TFTs). The TFTs with Pr do** exhibited a remarkable suppression of …
Spara Citera Citerat av 45 Relaterade artiklar Alla 5 versionerna
[Free GPT-4]
[DeepSeek]
[PDF] rsc.org

Thermal effect of annealing-temperature on solution-processed high-k ZrO 2 dielectrics

S Zhou, J Zhang, Z Fang, H Ning, W Cai, Z Zhu… - RSC …, 2019 - pubs.rsc.org
In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin
coating with varying pre-annealing temperatures and post-annealing temperatures. The …
Spara Citera Citerat av 16 Relaterade artiklar Alla 8 versionerna
[Free GPT-4]
[DeepSeek]
[HTML] mdpi.com

[HTML][HTML] Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

H Ning, X Liu, H Zhang, Z Fang, W Cai, J Chen, R Yao… - Materials, 2017 - mdpi.com
The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO)
films have been investigated. Since a state of tensile stress is available in as-deposited …
Spara Citera Citerat av 22 Relaterade artiklar Alla 11 versionerna Cachad
J Zhang, X Fu, S Zhou, H Ning, Y Wang, D Guo, W Cai… - Coatings, 2019 - mdpi.com
Solution-processed indium oxide is an ideal transparent semiconductor material with wide
band gap. Zirconium is an element characterized by a strong binding ability to oxygen which …
Spara Citera Citerat av 9 Relaterade artiklar Alla 5 versionerna Cachad