Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Antiferroelectrics have received blooming interests because of a wide range of potential
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …
Accurate compact nonlinear dynamical model for a volatile ferroelectric ZrO2 capacitor
We have measured the dynamical response of ZrO2 capacitors to applied triangular voltage
waveforms with varying frequencies and amplitudes to determine the voltage and charge on …
waveforms with varying frequencies and amplitudes to determine the voltage and charge on …
Investigation of ferro-resistive switching mechanisms in TiN/Hf0. 5Zr0. 5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect
This study presents an in-depth analysis of ferro-resistive switching (FRS) behaviors in a
TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/WO x/W ferroelectric tunnel junction (FTJ) device, with a …
TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/WO x/W ferroelectric tunnel junction (FTJ) device, with a …
Anisotropic polarized Raman and magnetic properties of relaxor ferroelectric LuFeMnO4 single crystal
J Zhao, H Luo, J Zhang, H Wang, Y Yang, J Zhang… - Ceramics …, 2025 - Elsevier
A large single crystal of LuFeMnO 4, measuring 4 mm in diameter and 90 mm in length, was
successfully grown using the optical floating zone method. The presence of clear Laue spots …
successfully grown using the optical floating zone method. The presence of clear Laue spots …
Advanced Ferroelectric Modeling for BEOL Negative Capacitance Nanoelectromechanical Switches
Negative capacitance (NC)-achieved by adding a ferroelectric layer in series with the
dielectric layer (air gap) of an electrostatic actuator-has been proposed as a means of …
dielectric layer (air gap) of an electrostatic actuator-has been proposed as a means of …
The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory
The capacitance behavior of the ultra-thin ferroelectric/dielectric (FE/DE) stacked devices in
the nanoscale cylindrical structure deviated from the negative capacitance (NC) state to …
the nanoscale cylindrical structure deviated from the negative capacitance (NC) state to …