Ferroelectric field-effect transistors based on HfO2: a review
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
Sliding induced multiple polarization states in two-dimensional ferroelectrics
When the atomic layers in a non-centrosymmetric van der Waals structure slide against each
other, the interfacial charge transfer results in a reversal of the structure's spontaneous …
other, the interfacial charge transfer results in a reversal of the structure's spontaneous …
Emergence of ferroelectricity in a nonferroelectric monolayer
W Li, X Zhang, J Yang, S Zhou, C Song… - Nature …, 2023 - nature.com
Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due
to potential applications in nonvolatile memory, nanoelectronics and optoelectronics …
to potential applications in nonvolatile memory, nanoelectronics and optoelectronics …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Enhanced multiwavelength response of flexible synaptic transistors for human sunburned skin simulation and neuromorphic computation
X Wang, S Yang, Z Qin, B Hu, L Bu, G Lu - Advanced Materials, 2023 - Wiley Online Library
In biological species, optogenetics and bioimaging work together to regulate the function of
neurons. Similarly, the light‐controlled artificial synaptic system not only enhances …
neurons. Similarly, the light‐controlled artificial synaptic system not only enhances …
Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications
This work presents 2-bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET)
with a 1 µs write pulse of maximum±5 V amplitude and WRITE endurance above 109 cycles …
with a 1 µs write pulse of maximum±5 V amplitude and WRITE endurance above 109 cycles …
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications
This article reports an improvement in the performance of the hafnium oxide-based (HfO2)
ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial …
ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial …
Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of
maximum amplitude 4.5 V for inference-engine applications. FeFET devices were fabricated …
maximum amplitude 4.5 V for inference-engine applications. FeFET devices were fabricated …
Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering
In this paper, we achieved excellent variation control, endurance enhancement, and
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
28 nm HKMG-based current limited FeFET crossbar-array for inference application
This article reports a novel ferroelectric field-effect transistor (FeFET)-based crossbar array
cascaded with an external resistor. The external resistor is shunted with the column of the …
cascaded with an external resistor. The external resistor is shunted with the column of the …