X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …
scientific research has to be focused on the development of materials that fulfil the growing …
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space map**
Strain and composition distributions within wurtzite InGaN/GaN layers are investigated by
high-resolution reciprocal space map** RSM. We illustrate the potential of RSM to detect …
high-resolution reciprocal space map** RSM. We illustrate the potential of RSM to detect …
Compositional pulling effects in layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
A depth-resolved study of the optical and structural properties of wurtzite InGaN/GaN
bilayers grown by metallorganic chemical vapor deposition on sapphire substrates is …
bilayers grown by metallorganic chemical vapor deposition on sapphire substrates is …
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
ME Vickers, MJ Kappers, TM Smeeton… - Journal of applied …, 2003 - pubs.aip.org
We have determined the indium content and the layer thicknesses in an InGaN epilayer and
InGaN/GaN quantum well structures by high-resolution x-ray diffraction (XRD) using the …
InGaN/GaN quantum well structures by high-resolution x-ray diffraction (XRD) using the …
Compositional dependence of the strain-free optical band gap in InxGa1− xN layers
The effect of strain on the compositional and optical properties of a set of epitaxial single
layers of InxGa1xN was studied. Indium content was measured free from the effects of strain …
layers of InxGa1xN was studied. Indium content was measured free from the effects of strain …
Rietveld refinement for indium nitride in the 105–295 K range
W Paszkowicz, R Černý, S Krukowski - Powder Diffraction, 2003 - cambridge.org
Results of Rietveld refinement for indium nitride data collected in the temperature range 105–
295 K are presented. Acicular microcrystals of indium nitride prepared by reaction of liquid …
295 K are presented. Acicular microcrystals of indium nitride prepared by reaction of liquid …
Determination of the composition of InxGa1− xN from strain measurements
The use of incorrect GaN and InN anisotropic elastic constants and unstrained lattice
constants, or the erroneous interpolation of InGaN elastic coefficients, have led to several …
constants, or the erroneous interpolation of InGaN elastic coefficients, have led to several …
High In content nitride sub-micrometer platelet arrays for long wavelength optical applications
We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by
metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat …
metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat …
Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy
X Wang, SB Che, Y Ishitani, A Yoshikawa - Journal of applied physics, 2006 - pubs.aip.org
Effect of growth temperature on 2.3 μ m thick N-polar InN films grown on GaN template at
440–620 C by plasma-assisted molecular beam epitaxy was investigated. We found …
440–620 C by plasma-assisted molecular beam epitaxy was investigated. We found …