Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p‐β Ga2O3/n‐GaN Heterojunction Fabricated by a Reversed …
Y Han, Y Wang, S Fu, J Ma, H Xu, B Li, Y Liu - Small, 2023 - Wiley Online Library
Abstract An excellent broad‐spectrum (220–380 nm) UV photodetector, covering the UVA‐
UVC wavelength range, with an ultrahigh detectivity of≈ 1015 cm Hz1/2 W− 1, is reported. It …
UVC wavelength range, with an ultrahigh detectivity of≈ 1015 cm Hz1/2 W− 1, is reported. It …
Advancements in Ga2O3-Based Heterojunction Ultraviolet Photodetectors: Types, Fabrication Techniques, and Integrated Materials for Enhancing Photoelectric …
X Zhu, Y Wu, Z Pan, W Lu - Journal of Alloys and Compounds, 2024 - Elsevier
Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …
Emerging opportunities in lead-free and lead–tin perovskites for environmentally viable photodetector applications
In modern society, photodetectors (PDs) have permeated virtually all areas of human life,
from home appliances to space exploration. This versatility generates a high demand for …
from home appliances to space exploration. This versatility generates a high demand for …
Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa2O3:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed …
Y Han, Y Wang, D **a, S Fu, C Gao, J Ma, H Xu… - Small …, 2023 - Wiley Online Library
This work reports a high‐detectivity solar‐blind deep ultraviolet photodetector with a fast
response speed, based on a nitrogen‐doped graphene/βGa2O3/GaN p‐i‐n heterojunction …
response speed, based on a nitrogen‐doped graphene/βGa2O3/GaN p‐i‐n heterojunction …
Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio
S Yan, T Jiao, Z Ding, X Zhou, X Ji… - Advanced Electronic …, 2023 - Wiley Online Library
Solar‐blind photodetectors have attracted extensive attention due to their advantages such
as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au …
as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au …
Quasi-vertical ε-Ga2O3 solar-blind photodetectors grown on p-Si substrates with Al2O3 buffer layer by metalorganic chemical vapor deposition
H Qian, X Zhang, Y Ma, L Zhang, T Chen, X Wei… - Vacuum, 2022 - Elsevier
oriented ε-Ga 2 O 3 thin films were heteroepitaxially grown on p-Si (111) substrates by
metalorganic chemical vapor deposition (MOCVD). The introduction of Al 2 O 3 buffer layer …
metalorganic chemical vapor deposition (MOCVD). The introduction of Al 2 O 3 buffer layer …
Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga 2 O 3/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector
A novel p–i–n self-powered solar-blind UV photodetector based on p-type spiro-MeOTAD
(spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the …
(spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the …
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great
attention over the last decade, which poses great advantages to complex device integration …
attention over the last decade, which poses great advantages to complex device integration …
Ultrasensitive pn junction UV-C photodetector based on p-Si/β-Ga2O3 nanowire arrays
Abstract Ultrasensitive UV-C photodetector (PD) based on β-Ga 2 O 3 nanowires (NWs)
were fabricated on p-type Si substrate using glancing angle deposition technique inside …
were fabricated on p-type Si substrate using glancing angle deposition technique inside …
Excellent Wavelength Selectivity of p-AlGaN/n-Ga2O3 Solar-Blind UVC PD
X He, R Sun, X Xu, H Geng, S Qi… - ACS Applied Materials …, 2024 - ACS Publications
Due to the advantages of ultrawide bandgap, chemical stability, self-powered, and low cost,
gallium oxide (Ga2O3) based photodetectors (PDs) are considered as one of the most …
gallium oxide (Ga2O3) based photodetectors (PDs) are considered as one of the most …