Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …

Novel information processing techniques are being actively explored to overcome
fundamental limitations associated with CMOS scaling. A new paradigm of adaptive …

In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …

We suggest a possible mechanism for bipolar switching in a Pt/TiO 2/Pt resistive switching
cell in terms of electrochemical reactions involving oxygen ions/vacancies. The …

Capacitance− voltage characteristics of high quality Pt Schottky diodes fabricated on oxygen-
vacancy-doped SrTiO 3 single crystals were used to obtain the oxygen vacancy profiles …

In this paper we analyze the possibility of creating a universal non-volatile memory in a near
future. Unlike DRAM and flash memories a new universal memory should not require …

We demonstrated multibit operation using a 250-nm Ir/TiO x/TiN resistive random access
memory by Schottky barrier height engineering. A Schottky barrier was formed by the …

Resistive switching characteristics of thermally oxidized tungsten thin films and their
switching mechanism were investigated, modifying thickness of the active layer (WO x) by …

The emergence of in-memory computing has shed light on solving high-power consumption
and low computation efficiency of the traditional computers built with von Neumann …

Functional and scalable memory selector devices are essential for high-density memory and
storage. This paper reviews the performance requirements and device options of two …