We analyze and compare different aspects of InAs/InAsSb and InAs/GaSb type-II
superlattices for infrared detector applications and argue that the former is the most effective …

Advances in bulk III-V semiconductor material such as InGaAsSb and metamorphic InAsSb,
as well as in a variety of type-II superlattices such as InGaAs/GaAsSb, InAs/GaSb, and …

There was a significant improvement in the performance of infrared nBn detectors utilizing
InAs/InAsSb absorbers culminating in the development of infrared focal plane arrays (FPAs) …

We studied long and very long wavelength InAs/InAsSb superlattice barrier infrared
detectors that contain p-type absorber layers in order to take advantage of the longer …

We report focal plane array (FPA) results on a mid-wavelength InAs/InAsSb type-II strained
layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 …

InAs/InAsSb type-II superlattice focal plane arrays that demonstrate high operability and
uniformity with cutoffs ranging from 5 μm to 13 μm have already been demonstrated …

In the past decade, infrared detectors with InAs/InAsSb (Gallium-free) type-II strained layer
superlattice absorbers became a technology of interest for many imaging applications. In …

Abstract We explore InAs/InAsSb type-II superlattice long wavelength infrared detector
based focal plane arrays for potential NASA land imaging applications. We used the …

Mid-wavelength infrared detectors and focal plane array based on n-type InAs/InAsSb type-II
strained layer superlattice absorbers have achieved excellent performance. In the long and …

The unipolar barrier photodetector architecture such as the nBn provides an effective means
for lowering generationrecombination dark current by suppressing Shockley-Read-Hall …