Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its
potential in develo** optoelectronic devices such as solar cell and electric–optical …

Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated
Co/BaTiO 3/SrRuO 3 ferroelectric tunnel junctions (FTJs) has been performed from micron to …

As we reach the physical limit of Moore's law and silicon based electronics, alternative
schemes for memory and sensor devices are being proposed on a regular basis. The …

Second‐order memristors with their internal short‐term dynamics display behavioral
similarities with biological neurons and constitute an ideal basis unit for hardware …

Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient
digital memories and analog memcomputing devices. In this work, we investigate the impact …

Aberration corrected scanning transmission electron microscopy is used to directly observe
atom columns in an epitaxial BaTiO 3 thin film deposited on a 3.6 nm-thick SrRuO 3 …

We experimentally investigate the structural, magnetic, and electrical transport properties of
La 0.67 Sr 0.33 MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results …

Electric field control of magnetization allows further miniaturization of integrated circuits for
binary bit processing and data storage as it eliminates the need for bulky sophisticated …

The ferroelectric tunnel junction (FTJ) is an emerging low-power device that has potential
application as a non-volatile memory and logic element in beyond-CMOS circuits. As a …

Oxides are an important class of materials exhibiting properties useful in the modern
technological applications. A wide range of oxides are inherently stable, both chemically …