Based on density functional theory, we investigate the ferroelectric and piezoelectric
properties of the AlN/ScN superlattice, consisting of ScN and AlN buckled monolayers …

The combination of inorganic semiconductors with organic thin films promises new
strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical …

Abstract The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by
stacking ultra-thin (≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we …

Abstract InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed
in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as …

The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …

InN-based III nitride quantum dot (QD) technology has attracted much attention for extended
potential applications in photonic devices covering a broad spectrum compared to …

In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium
Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures …

Electron and hole mobilities of GaN are calculated for three-dimensional (3D, bulk) and two-
dimensional [2D, quantum well (QW), and HEMT] structures, including scattering processes …

The use of strained substrates may overcome indium incorporation limits without inducing
plastic relaxation in InGaN quantum wells, and this is particularly important for short-period …

In this work, an In x Ga 1− x As y Sb 1− y quaternary alloy with a vertical distribution of type-II
InAs/GaSb superlattices is grown in the miscibility gap using a fractional monolayer alloy …