[BUCH][B] The physics and modeling of MOSFETS: surface-potential model HiSIM
M Miura-Mattausch - 2008 - books.google.com
This volume provides a timely description of the latest compact MOS transistor models for
circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit …
circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit …
HiSIM2: Advanced MOSFET model valid for RF circuit simulation
M Miura-Mattausch, N Sadachika… - … on Electron Devices, 2006 - ieeexplore.ieee.org
The compact MOSFET model development trend leads to models based on the channel
surface potential, allowing higher accuracy and a reduced number of model parameters …
surface potential, allowing higher accuracy and a reduced number of model parameters …
A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis
D Navarro, Y Takeda, M Miyake… - IEEE transactions on …, 2006 - ieeexplore.ieee.org
In this paper, a compact model of nonquasi-static (NQS) carrier-transport effects in
MOSFETs is reported, which takes into account the carrier-response delay to form the …
MOSFETs is reported, which takes into account the carrier-response delay to form the …
HiSIM2 Circuit simulation-Solving the speed versus accuracy crisis
HJ Mattausch, M Miyake, T Yoshida… - IEEE Circuits and …, 2006 - ieeexplore.ieee.org
The development trend in compact modeling goes toward surface-potential-based
approaches and leads to models like HiSIM2, with higher accuracy, fewer model …
approaches and leads to models like HiSIM2, with higher accuracy, fewer model …
On the validity of conventional MOSFET nonlinearity characterization at RF switching
D Navarro, Y Takeda… - IEEE microwave and …, 2006 - ieeexplore.ieee.org
We analyze the linearity of metal oxide semiconductor field effect transistors (MOSFETs) at
radio frequency switching using the conventional extraction method of IP3, measured …
radio frequency switching using the conventional extraction method of IP3, measured …
Efficient non-quasi-static MOSFET model for both time-domain and frequency-domain analysis
K Machida, D Navarro, M Miyake… - Digest of Papers …, 2006 - ieeexplore.ieee.org
A consistent non-quasi-static MOSFET model for time-domain and frequency-domain circuit
simulation is developed. The model takes into account the time delay for carriers to form the …
simulation is developed. The model takes into account the time delay for carriers to form the …
HiSIM-HV: A scalable, surface-potential-based compact model for high-voltage MOSFETs
HJ Mattausch, N Sadachika, M Yokomichi… - Power/HVMOS Devices …, 2010 - Springer
The main features of the industry standard compact model HiSIM-HV for high-voltage
MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential …
MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential …
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations
T Ezaki, D Navarro, Y Takeda, N Sadachika… - … and Computers in …, 2008 - Elsevier
We develop a non-quasi-static MOSFET compact model suitable for simulating RF circuits
operating under GHz frequency. The model takes into account the carrier dynamics by …
operating under GHz frequency. The model takes into account the carrier dynamics by …
MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
M Miura-Mattausch, HJ Mattausch… - JSTS: Journal of …, 2004 - koreascience.kr
The origin of the phenomena, obstructing circuit performance in the RF operating regime, as
well as their modeling will be discussed. The applied surface-potential-based modeling …
well as their modeling will be discussed. The applied surface-potential-based modeling …