Wide band gap ferromagnetic semiconductors and oxides
Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …
semiconductors give hope that a new generation of microelectronic devices based on the …
Ferromagnetism of ZnO and GaN: a review
The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …
(Ga, Mn) As: a new diluted magnetic semiconductor based on GaAs
A new GaAs-based diluted magnetic semiconductor,(Ga, Mn) As, was prepared by
molecular beam epitaxy. The lattice constant of (Ga, Mn) As films was determined by x-ray …
molecular beam epitaxy. The lattice constant of (Ga, Mn) As films was determined by x-ray …
Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors
Magnetotransport properties of p-type (In, Mn) As, a new diluted magnetic semiconductor
based on a III-V semiconductor, are studied. The interaction between the holes and the Mn …
based on a III-V semiconductor, are studied. The interaction between the holes and the Mn …
Properties of ferromagnetic III–V semiconductors
H Ohno - Journal of magnetism and magnetic materials, 1999 - Elsevier
This review covers the experimental and theoretical results on III–V-based ferromagnetic
semiconductors ((In, Mn) As and (Ga, Mn) As) accumulated to date. It was found in 1989 that …
semiconductors ((In, Mn) As and (Ga, Mn) As) accumulated to date. It was found in 1989 that …
Room-Temperature Ferromagnetism in a II-VI Diluted Magnetic Semiconductor
H Saito, V Zayets, S Yamagata, K Ando - Physical review letters, 2003 - APS
The magnetic and magneto-optical properties of a Cr-doped II-VI semiconductor ZnTe were
investigated. Magnetic circular dichroism measurements showed a strong interaction …
investigated. Magnetic circular dichroism measurements showed a strong interaction …
High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn Do**
We show that suitably designed magnetic semiconductor heterostructures consisting of Mn
delta (δ)-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of …
delta (δ)-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of …
[HTML][HTML] Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport
Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin
degrees of freedom as well as charge transport in materials and devices. While metal-based …
degrees of freedom as well as charge transport in materials and devices. While metal-based …
(GaMn) As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
T Hayashi, M Tanaka, T Nishinaga, H Shimada… - Journal of crystal …, 1997 - Elsevier
We have grown novel III–V diluted magnetic semiconductors,(Ga1− xMnx) As, on GaAs
substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth …
substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth …
Epitaxy of (Ga, Mn) As, a new diluted magnetic semiconductor based on GaAs
GaAs-based diluted magnetic semiconductor,(Ga, Mn) As, with Mn composition x up to 0.07
was prepared by molecular-beam epitaxy on GaAs substrate at temperatures ranging from …
was prepared by molecular-beam epitaxy on GaAs substrate at temperatures ranging from …