Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …

The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …

A new GaAs-based diluted magnetic semiconductor,(Ga, Mn) As, was prepared by
molecular beam epitaxy. The lattice constant of (Ga, Mn) As films was determined by x-ray …

Magnetotransport properties of p-type (In, Mn) As, a new diluted magnetic semiconductor
based on a III-V semiconductor, are studied. The interaction between the holes and the Mn …

This review covers the experimental and theoretical results on III–V-based ferromagnetic
semiconductors ((In, Mn) As and (Ga, Mn) As) accumulated to date. It was found in 1989 that …

The magnetic and magneto-optical properties of a Cr-doped II-VI semiconductor ZnTe were
investigated. Magnetic circular dichroism measurements showed a strong interaction …

The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition,
cover the most recent research in areas of spin-current generation, spin-calorimetric effect …

We show that suitably designed magnetic semiconductor heterostructures consisting of Mn
delta (δ)-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of …

Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin
degrees of freedom as well as charge transport in materials and devices. While metal-based …

We have grown novel III–V diluted magnetic semiconductors,(Ga1− xMnx) As, on GaAs
substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth …