We analyze the complex turn-on behavior of semiconductor quantum-dot (QD) lasers in
terms of a nonlinear rate equation model for the electron and hole densities in the QDs and …

This chapter focuses on the modeling of self‐organized semiconductor quantum dot (QD)
laser devices and on the discussion of their dynamic properties. It uses a microscopically …

The modulation response of quantum-dot (QD) lasers is studied. Based on a set of four rate
equations, a new analytical modulation transfer function is developed via a small-signal …

The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing
quantum dot (QD) semiconductor lasers are investigated through a set of improved rate …

In this paper, a theoretical model is used to investigate the lasing spectrum properties of
InAs-InP (113) B quantum dot (QD) lasers emitting at 1.55 mum. The numerical model is …

This paper theoretically investigates the optical noise characteristics of the simultaneous
ground-state (GS) and excited-state (ES) lasing quantum dot lasers. The optical noise …

The phase noise of quantum dot lasers is investigated theoretically by coupling the
Langevin noise sources into the rate equations. The off-resonant populations in the excited …

We introduce an analytical approach to describe the multi-state lasing phenomenon in
quantum dot lasers. We show that the key parameter is the hole-to-electron capture rate …

Quantum-dot lasers can exhibit simultaneous ground-and excited-state lasing. With
increasing pump current, a quenching of the ground-state lasing intensity is sometimes …

Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …