Integrated digital and analog circuit blocks in a scalable silicon carbide CMOS technology
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years
in many research fields, such as power electronics, high operation temperature circuits …
in many research fields, such as power electronics, high operation temperature circuits …
Characterization and modeling of self-heating in nanometer bulk-CMOS at cryogenic temperatures
This work presents a self-heating study of a 40-nm bulk-CMOS technology in the ambient
temperature range from 300 K down to 4.2 K. A custom test chip was designed and …
temperature range from 300 K down to 4.2 K. A custom test chip was designed and …
Measurement-based extraction and analysis of a temperature-dependent equivalent-circuit model for a SAW resonator: From room down to cryogenic temperatures
This article provides for the first time a very extensive experimental characterization coupled
with a fully analytical modeling in order to investigate, in a systematic and comprehensive …
with a fully analytical modeling in order to investigate, in a systematic and comprehensive …
[HTML][HTML] A 4H-SiC CMOS oscillator-based temperature sensor operating from 298 K up to 573 K
N Rinaldi, R Liguori, A May, C Rossi, M Rommel… - Sensors, 2023 - mdpi.com
In this paper, we propose a temperature sensor based on a 4H-SiC CMOS oscillator circuit
and that is able to operate in the temperature range between 298 K and 573 K. The circuit is …
and that is able to operate in the temperature range between 298 K and 573 K. The circuit is …
RESURF n-LDMOS transistor for advanced integrated circuits in 4H-SiC
J Weiße, C Matthus, H Schlichting… - … on Electron Devices, 2020 - ieeexplore.ieee.org
The electrical behavior of lateral 4H-SiC n-laterally-diffused metal-oxide semiconductor
(LDMOS) transistors with reduced surface field (RESURF) for integrated circuits was …
(LDMOS) transistors with reduced surface field (RESURF) for integrated circuits was …
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
H Okeil, T Erlbacher, G Wachutka - Advanced Materials …, 2025 - Wiley Online Library
Abstract 4H‐SiC is a key enabler for realizing integrated electronics operating in harsh
environments, which exhibit very high temperatures. Through advances in 4H‐SiC process …
environments, which exhibit very high temperatures. Through advances in 4H‐SiC process …
IVT Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures
In this work, we demonstrate the usability of a fully-2D-material based device consisting of
MoS 2/WSe 2 heterojunction encapsulated by hBN and contacted by graphene as …
MoS 2/WSe 2 heterojunction encapsulated by hBN and contacted by graphene as …
Effect of defects on the performance of Si-based GeSn/Ge mid-infrared phototransistors
In this paper, we discuss the impact of interfaces and defects on the frequency performance
of Si-based GeSn heterojunction phototransistors (HPTs) at room temperature. Furthermore …
of Si-based GeSn heterojunction phototransistors (HPTs) at room temperature. Furthermore …
Mid-Infrared Photodetectors-based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor with an i-GeSn Absorber Layer
This work proposes a high-performance lattice-matched SiGeSn/GeSn/SiGeSn
heterojunction bipolar phototransistors (HPTs) and pin photodiodes grown on strain-free …
heterojunction bipolar phototransistors (HPTs) and pin photodiodes grown on strain-free …
Visible blind quadrant sun position sensor in a silicon carbide technology
J Romijn, S Vollebregt, A May… - 2022 IEEE 35th …, 2022 - ieeexplore.ieee.org
In this paper, we present a quadrant sun position sensor microsystem device in a silicon
carbide technology that operates in a field-of-view of±33° and reaches a mean error of 1.9° …
carbide technology that operates in a field-of-view of±33° and reaches a mean error of 1.9° …