Influence of GaN barrier thickness on optical properties of in-graded InGaN/GaN multiple...

Investigation of modulation bandwidth of InGaN green micro-LEDs by varying quantum barrier thickness

Z Yuan, Y Li, X Lu, Z Wang, P Qiu, X Cui… - … on Electron Devices, 2022 - ieeexplore.ieee.org
InGaN-based micro light-emitting diodes (micro-LEDs) with 5, 10, and 13 nm quantum
barrier (QB) thickness were fabricated by metal-organic chemical vapor deposition …
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[PDF] sciencedirect.com

Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition

W Lu, N Goto, H Murakami, N Sone, K Iida… - Applied Surface …, 2020 - Elsevier
Abstract Nonpolar GaInN/GaN multiple-quantum shells (MQSs) on nanowires (NWs) were
investigated for high-efficiency light-emitting diodes (LEDs). The growth conditions of NWs …
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GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

J Huang, G Wang, H Xu, F Xu, T Zhi… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Visible light communication (VLC) based on micro light-emitting diodes (micro-LEDs) offers
energy-efficient methods for explosive data transmission. However, the severe quantum …
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[PDF] ieee.org

Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN multiple-quantum-well LEDs

P Mishra, B Janjua, TK Ng, C Shen… - IEEE Photonics …, 2015 - ieeexplore.ieee.org
We investigated the design and growth of compositionally graded InGaN multiplequantum-
well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer …
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[PDF] researchgate.net

Simulation of full-color III-nitride LED with intermediate carrier blocking layers

MV Kisin, DV Mamedov, HS El-Ghoroury - Optical and Quantum …, 2016 - Springer
Intermediate carrier blocking layers (ICBLs) adjacent to optically active quantum wells (QWs)
are used for tailoring the output color spectra in multi-color III-nitride light-emitting diode …
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[PDF] springer.com

Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

S Ge, J Dai, N Gao, S Lu, P Li, K Huang, B Liu… - Nanoscale Research …, 2019 - Springer
Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint
lithography and top-down dry etching techniques from a fully structural LED wafer. Highly …
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[PDF] kaust.edu.sa

III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

P Mishra - 2017 - repository.kaust.edu.sa
Group III-nitride materials have attracted great attention for applications in high efficiency
electronic and optoelectronics devices such as high electron mobility transistors, light …
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Study on optical properties of indium-graded semipolar InGaN/GaN quantum well

F Zeng, L Zhu, W Liu, W Liu, H Wang… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
The electronic and optical properties of indium-graded semipolar quantum well (QW)
structures with different indium variation schemes and well widths have been investigated by …
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III-Nitride Metalorganic Vapor-Phase Epitaxy

DD Koleske - Handbook of GaN Semiconductor Materials and …, 2017 - taylorfrancis.com
This article describes the metalorganic vapor-phase epitaxy (MOVPE) of group III-nitride
materials. Emphasis is placed on the chemistry, growth mechanisms, and materials …
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[PDF] academia.edu

[PDF][PDF] Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

AY Alyamani - academia.edu
We investigated the design and growth of compositionally graded InGaN multiplequantum-
well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer …
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