A review of hot carrier degradation in n-channel MOSFETs—Part I: Physical mechanism
Transistor parametric drift due to conductionmode hot carrier degradation (HCD) in n-
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …
A review of hot carrier degradation in n-channel MOSFETs—Part II: Technology scaling
Transistor parametric drift due to conduction mode hot carrier degradation (HCD) is
reviewed. The time kinetics in n-channel MOSFETs and FinFETs is analyzed for channel …
reviewed. The time kinetics in n-channel MOSFETs and FinFETs is analyzed for channel …
Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs
Using our physics-based model for hot-carrier degradation (HCD), we analyze the
temperature behavior of HCD in nMOSFETs with a channel length of 44 nm. It was observed …
temperature behavior of HCD in nMOSFETs with a channel length of 44 nm. It was observed …
treatment of silicon-hydrogen bond rupture at interfaces
Even after more than 50 years of development, a major issue in silicon-based technology is
the understanding of the Si/SiO 2 interface and its defects, particularly the unsaturated …
the understanding of the Si/SiO 2 interface and its defects, particularly the unsaturated …
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs
Gate-all-around stacked nano-sheet (GAA-SNS) p-channel field effect transistors (FETs)
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD
The Reaction Diffusion Drift (RDD) model is incorporated in the Sentaurus Technology CAD
(TCAD) framework and coupled with carrier and lattice heating to calculate the generation of …
(TCAD) framework and coupled with carrier and lattice heating to calculate the generation of …
Analysis of hcd effects for nmos transistor with technology scaling
Hot carrier degradation (HCD) is a significant cause of concern regarding the reliability
issues for metal oxide semiconductor field effect transistors (MOSFETs) in the nanoscale …
issues for metal oxide semiconductor field effect transistors (MOSFETs) in the nanoscale …
Hot carrier injection reliability in nanoscale field effect transistors: Modeling and simulation methods
Y Wang, Y Li, Y Yang, W Chen - Electronics, 2022 - mdpi.com
Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …
Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation
We propose two different approaches to describe carrier transport in n-laterally diffused
MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for …
MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for …
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
We perform a comprehensive analysis of hot-carrier degradation (HCD) in FinFETs. To
accomplish this goal we employ our physics-based HCD model and validate it against …
accomplish this goal we employ our physics-based HCD model and validate it against …