N-type hydrogenated nanocrystalline silicon oxide (nc-SiO x: H) is potential to enhance the
performance of silicon heterojunction solar cells, but the raised plasma damage on …

Silicon carbide (SiC) thin films were deposited using hot wire chemical vapor deposition
technique from silane (SiH 4) and methane (CH 4) gas precursors. The effect of deposition …

To overcome major problems associated with insufficient incorporation of nitrogen in
hydrogenated amorphous silicon nitride (a-SiNx: H) nanomaterials, which in turn impedes …

Hydrogenated silicon films ranging from pure amorphous to biphasic silicon ie,
nanocrystallites embedded amorphous silicon are prepared in an indigenously fabricated …

Hydrogenated nanocrystalline silicon films were prepared by hot‐wire method at low
substrate temperature (200∘ C) without hydrogen dilution of silane (SiH4). A variety of …

Abstract The electrodeposition from Room Temperature Ionic Liquids (RTILs) has recently
emerged as a low cost technique for the growth of group IV thin films or nanostructures …

The present chapter is devoted to the study of amorphous (a-Si: H), polymorphous (pm-Si:
H), and microcrystalline (uc-Si: H) silicon, deposited by the plasma-enhanced chemical …

The effect of substrate temperature on the structural property of the silicon nanostructures
deposited on gold-coated crystal silicon substrate by hot-wire chemical vapor deposition …

A comparative study on the application of two quite different plasma-based techniques to the
preparation of amorphous/crystalline silicon (a-Si: H/c-Si) interfaces for solar cells is …

In this work we have investigated the dependence of optical and electrical properties of RF
sputtered undoped a-Si: H films and B or P doped a-Si: H films on hydrogen flow rate (FH) …