Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Effect of defect layer on the creation of electronic states in GaAs/GaAlAs multi-quantum wells
FZ Elamri, F Falyouni, A Kerkour-El Miad, D Bria - Applied Physics A, 2019 - Springer
The current paper presents a theoretical study of the transmission and the electronic band
structure for multi-quantum wells, consisting of two periodic semiconductor materials …
structure for multi-quantum wells, consisting of two periodic semiconductor materials …
Investigations in electronic quantum transport of quasi two dimensional InxGa1-xAs/InP nanostructure superlattice for infrared detection
We investigated, theoretically, the electronic band structures, transport and magneto-
transport properties of In 0.53 Ga 0.47 As (d 1= 10 nm)/InP (d 2= 5 nm) lattice matched …
transport properties of In 0.53 Ga 0.47 As (d 1= 10 nm)/InP (d 2= 5 nm) lattice matched …
Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors
We report in this study the optoelectronic properties of mid-and long-wave infrared type II
multiple quantum wells (MQWs) of InAs (d 1)/GaSb (d 2) using our enhanced envelope …
multiple quantum wells (MQWs) of InAs (d 1)/GaSb (d 2) using our enhanced envelope …
Long wavelength Infrared Detection, Bands Structure and effective mass in InAs/GaSb Nanostructure Superlattice
We have investigated in the bands structure and the effective mass, respectively, along the
growth axis and in the plane of InAs (d 1= 48.5 Å)/GaSb (d 2= 21.5 Å) type II superlattice …
growth axis and in the plane of InAs (d 1= 48.5 Å)/GaSb (d 2= 21.5 Å) type II superlattice …