The optical properties of germanium can be tailored by combining strain engineering and n-
type do**. In this paper, we review the recent progress that has been reported in the study …

Silicon, germanium, and related alloys, which provide the leading materials platform of
electronics, are extremely inefficient light emitters because of the indirect nature of their …

The controlled application of strain in crystalline semiconductors can be used to modify their
basic physical properties to enhance performance in electronic and photonic device …

We show that a strong tensile strain can be applied to germanium microdisks using silicon
nitride stressors. The transferred strain allows one to control the direct band gap emission …

The epitaxial growth of Ge and GeSn alloys on Si (100) by Reduced Pressure Chemical
Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the …

Ge/Si (001) heterostructures grown by means of ultrahigh vacuum chemical vapor
deposition have been investigated by means of variable temperature high resolution x ray …

Germanium ridge waveguides can be tensilely strained using silicon nitride thin films as
stressors. We show that the strain transfer in germanium depends on the width of the …

In this work, a CdTe/Ge/Si photodetector was fabricated using two different methods. The
thermal evaporation method was used to prepare Ge on n-type silicon substrates, and then …

The use of tensilely strained Ge nanomembranes as mid‐infrared optical gain media is
investigated. Biaxial tensile strain in Ge has the effect of lowering the direct energy bandgap …

We show that high quality tensile-strained n-doped germanium films can be obtained on
InGaAs buffer layers using metal-organic chemical vapor deposition with isobutyl germane …