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Vibrational spectroscopy of compound semiconductor nanocrystals
A review of recent applications of Raman spectroscopy as a fast, sensitive, and non-
destructive technique for exploring II–VI semiconductor nanocrystals fabricated by various …
destructive technique for exploring II–VI semiconductor nanocrystals fabricated by various …
Photoluminescence and Raman Scattering from Catalytically Grown ZnxCd1-xSe Alloy Nanowires
R Venugopal, PI Lin, YT Chen - The Journal of Physical Chemistry …, 2006 - ACS Publications
Zn x Cd1-x Se alloy nanowires, with composition x= 0, 0.2, 0.5, 0.7, and 1, have been
successfully synthesized by a chemical vapor deposition (CVD) method assisted with laser …
successfully synthesized by a chemical vapor deposition (CVD) method assisted with laser …
RETRACTED ARTICLE: Surface Passivation of CdSe Quantum Dots in All Inorganic Amorphous Solid by Forming Cd1−xZnxSe Shell
CdSe quantum dots (QDs) doped glasses have been widely investigated for optical filters,
LED color converter and other optical emitters. Unlike CdSe QDs in solution, it is difficult to …
LED color converter and other optical emitters. Unlike CdSe QDs in solution, it is difficult to …
Synthesis and characterization of colloidal ternary ZnCdSe semiconductor nanorods
For the synthesis of colloidal ternary ZnCdSe nanorods, CdSe nanorods were first prepared
under a mixture of tetradecylphosphonic acid/trioctylphosphine oxide surfactants at 250 C …
under a mixture of tetradecylphosphonic acid/trioctylphosphine oxide surfactants at 250 C …
Effect of Al2O3 on the formation of color centers and CdSe/Cd1−xZnxSe quantum dots in SiO2–Na2O–ZnO glasses
M **a, C Liu, Y Xu, X Zhao - Journal of the American Ceramic …, 2019 - Wiley Online Library
Abstract color centers and CdSe/Cd1− xZ nxSe quantum dots (QD s) were formed in silicate
glasses, respectively, by carefully adjusting the content of Al2O3. The absorption coefficient …
glasses, respectively, by carefully adjusting the content of Al2O3. The absorption coefficient …
Nanoscratch characterization of GaN epilayers on c-and a-axis sapphire substrates
MH Lin, HC Wen, YR Jeng, CP Chou - Nanoscale research letters, 2010 - Springer
In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN)
epilayers on c-and a-axis sapphire substrates and then used the nanoscratch technique and …
epilayers on c-and a-axis sapphire substrates and then used the nanoscratch technique and …
Optical characterization of Cd1−xZnxSe nanocrystals grown in borosilicate glass
Cd1− xZnxSe nanocrystals with x up to 0.28 and average diameter ranging from 6.5 to 12.5
nm were obtained in borosilicate glass by diffusion‐limited growth. Their average size and …
nm were obtained in borosilicate glass by diffusion‐limited growth. Their average size and …
Phonon spectra of quaternary Cd1–y Zny S1–x Sex semiconductor nanocrystals grown in a glass matrix
Abstract Quaternary Cd1–y Zny S1–x Sex nanocrystals are obtained in a borosilicate glass
matrix by solid‐state precipitation at temperatures within 625 to 700° C. Raman …
matrix by solid‐state precipitation at temperatures within 625 to 700° C. Raman …
Nanomechanical characteristics of annealed Si/SiGe superlattices
MJ Wu, HC Wen, SC Wu, PF Yang, YS Lai… - Applied surface …, 2011 - Elsevier
In this study, the nanomechanical damage was investigated on the annealed Si/SiGe
strained-layer superlattices (SLSs) deposited using an ultrahigh-vacuum chemical vapor …
strained-layer superlattices (SLSs) deposited using an ultrahigh-vacuum chemical vapor …
Multi-phonon (percolation) behavior and local clustering of CdxZn1− xSe-cubic mixed crystals (x≤ 0.3): A Raman–ab initio study
We present a polarization-dependent pure transverse-optic (TO) Raman study of high-
quality Cd x Zn 1− x Se single crystals with zincblende (cubic) structures (x≤ 0.3) covering …
quality Cd x Zn 1− x Se single crystals with zincblende (cubic) structures (x≤ 0.3) covering …